Building Better Warfighters
Selected Publications
02/01/2011
ACS Nano, 2010, 4 (5), pp 2667–2672
Joshua A. Robinson, Michael LaBella, Mike Zhu, Matt Hollander, Richard Kasarda, Zachary Hughes, Kathleen Trumbull, Randal Cavalero, and David Snyder
"We present a robust method for forming high quality ohmic contacts to graphene, which improves the contact resistance by nearly 6000 times compared to untreated metal/graphene interfaces. The optimal specific contact resistance for treated Ti/Au contacts is found to average <10-7Ωcm2. Additionally, we examine Al/Au, Ti/Au, Ni/Au, Cu/Au, Pt/Au, and Pd/Au contact metallizations and find that most metallizations result in similar specific contact resistances in this work regardless of the work function difference between graphene and the metal overlayer. The results presented in this work serve as a foundation for achieving ultralow resistance ohmic contacts to graphene for high speed electronic and optoelectronic applications."
06/28/2010
Reducing the Pyroelectric Effect in Lithium Niobate Q-Switch Crystals 
SPIE Optical Engineering Journal, December 2010
Dr. Brian Brickeen, Rob Shanta
The influences of thermo-chemical reduction processing on the physical properties of lithium niobate were studied. Processed samples showed a significant reduction in the transient depolarization of transmitted laser light due to the pyroelectric effect
05/19/2010
IEEE AVFOP 2010 Conference, 19 May 2010
John Mazurowski
Use of wire for signal transmission has endured all of aviation history without major changes. Present investment in cable technology yields only minor improvements in performance. Emphasizing system level optical interconnects improves cost versus benefit
04/23/2010
ACS Nano, 2010, 4 (5), pp 2667–2672
Dr. Joshua Robinson, Michael Labella, Kathleen Trumbell, Dr. Xiaojun Weng, Randal Caverlero, Tad Daniels, Sachary Hughes, Dr. Mark Fanton, Dr. David Synder
"We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al2O3, HfO2, TiO2, and Ta2O5 varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta2O5, while the deposition if TiO2 appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance."